FP50R12N2T4B86BPSA1

$57.89

Description：LOW POWER ECONO
Series：-

SKU:3c0e3a164f89 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：LOW POWER ECONO
Series：-
Mfr：Infineon Technologies
Package：Tray
IGBT Type：-
Configuration：-
Vce(on) (Max) @ Vge, Ic：-
Input：-
NTC Thermistor：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Power - Max：-
Current - Collector Cutoff (Max)：-
Input Capacitance (Cies) @ Vce：-

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FP50R12N2T4B86BPSA1

Overview

The FP50R12N2T4B86BPSA1 is a silicon IGBT module from Infineon Technologies, rated at 1200 V collector-emitter voltage and 50 A continuous collector current. It features a 3-phase inverter configuration with a saturation voltage of 1.5 V and power dissipation of 280 W. Operating temperatures range from -40 C to +175 C, with a gate-emitter maximum voltage of 20 V.

Feature Summary

Integrates TRENCHSTOP™ IGBT7 technology for high switching performance
Includes integrated NTC thermistor for precise thermal monitoring
Utilizes EconoPIM2 package design for compact integration

Applications

Industrial motor drives
Uninterruptible power supplies (UPS)
Induction heating systems

Procurement Notes

Verify the specific suffix B86 against official datasheets to confirm exact electrical characteristics and pinout compatibility. Ensure thermal interface materials match the EconoPIM2 mounting requirements. Confirm RoHS compliance status through manufacturer documentation before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring high power density and reliable thermal management. The integrated NTC sensor simplifies temperature control loops. Compare saturation voltage and switching losses against system efficiency targets. Ensure the 1200 V rating exceeds peak circuit voltages with adequate safety margins.

Part Context

This module belongs to the EconoPIM2 series, designed for three-phase inverter applications. It combines IGBTs with anti-parallel diodes in a single package. The series emphasizes reduced parasitic inductance and improved thermal cycling resistance compared to previous generations.