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The FP50R12N2T7B16BPSA1 is a Power Integrated Module (PIM) IGBT module manufactured by Infineon Technologies. It utilizes TRENCHSTOP™ IGBT7 technology and belongs to the FPXR12N2X7G series. The device features a 3-phase inverter configuration with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 50 A at 25°C. The typical collector-emitter saturation voltage is 1.5 V, while the gate-emitter leakage current is specified at 100 nA. Operating temperatures range from -40°C to +175°C, with a maximum gate-emitter voltage of 20 V. The component is housed in a Tray package and employs Silicon technology.
Verify the specific ordering suffix B16 against official Infineon documentation to confirm exact mechanical and electrical specifications. Confirm RoHS compliance status through the manufacturer's product qualification reports. Ensure compatibility with existing thermal management solutions given the 175°C junction temperature rating. Cross-reference the SP005354118 alias for accurate inventory tracking.
Select this module for applications requiring a 1200 V, 50 A three-phase inverter solution. Consider the 1.5 V saturation voltage for conduction loss calculations. Verify that the system design accommodates the specific pinout and dimensions of the FPXR12N2X7G series packaging. Evaluate thermal resistance requirements based on the intended duty cycle and ambient conditions.
This component is part of Infineon's FPXR12N2X7G series, which incorporates TRENCHSTOP™ IGBT7 technology. The series is designed for high-efficiency power conversion in industrial applications. The B16 suffix denotes specific packaging or variant details within this family. It shares technological foundations with other modules in the TRENCHSTOP™ IGBT7 lineup.
Consult official Infineon substitution guides for compatible alternatives. Verify pin-to-pin compatibility and thermal characteristics before replacing. Check for updated datasheets regarding any functional changes in newer revisions.