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The FP50R12N2T7B76BPSA1 is a PIM IGBT module from Infineon Technologies rated at 1200 V and 50 A. It utilizes trench field stop IGBT technology in a three-phase inverter configuration. The component integrates high-power density switching capabilities suitable for demanding industrial power conversion applications requiring robust thermal performance and efficient energy management.
Verify the specific datasheet revision and ordering suffix to ensure compatibility with required thermal interface materials and gate drive characteristics. Confirm that the package dimensions and terminal configurations match the target PCB layout or busbar assembly specifications before finalizing procurement orders.
Select this module when a 1200 V rating and 50 A current capacity are required for three-phase inverter topologies. Consider the thermal resistance characteristics and mounting requirements of the PIM form factor against the available cooling infrastructure in the application environment.
This component belongs to Infineon's portfolio of intelligent power modules designed for medium-power applications. It represents a solution combining multiple semiconductor chips within a single insulated package to reduce parasitic inductances and simplify assembly processes compared to discrete component implementations.
Public confirmed substitute part numbers are not available in the provided documentation.