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Product Detailed Parameters
- Description：IGBT MOD 1200V 105A 355W
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：NPT
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 75A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：105 A
- Power - Max：355 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：5.3 nF @ 25 V
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Overview
The FP75R12KE3BOSA1 is a single IGBT module from Infineon Technologies, utilizing NPT technology. It features an inverter IGBT rated at 1200 V collector-emitter voltage and 75 A continuous DC collector current (TC=80°C). The brake-chopper IGBT is rated at 40 A. Integrated freewheeling and rectifier diodes support 1200 V and 1600 V blocking voltages respectively. The module includes an integrated NTC thermistor with a nominal resistance of 5 kΩ at 25°C. Total power dissipation is 355 W at TC=25°C. Operating junction temperature ranges from -40°C to 125°C.
Feature Summary
- Integrates NPT IGBTs with fast recovery freewheeling diodes and high-voltage rectifier diodes in a single package.
- Includes an embedded NTC thermistor for precise thermal monitoring within the module.
- Features copper baseplate construction with aluminum oxide internal insulation for effective heat dissipation and electrical isolation.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer's part number against official datasheets. Confirm that the specific ordering suffix matches the required technical specifications. Ensure compliance with RoHS directives and check for any relevant REACH SVHC declarations prior to integration into final assemblies.
Selection Notes
Select this module based on its 1200 V rating and 75 A continuous current capability for medium-power applications. Consider the thermal resistance values when designing heatsinking solutions. Verify that the gate drive requirements align with the specified threshold and saturation characteristics for optimal switching performance.
Part Context
This component belongs to the FP series of IGBT modules manufactured by Infineon Technologies. It utilizes NPT (Non-Punch-Through) technology for robust operation. The module integrates both switching and rectification functions, providing a compact solution for power conversion circuits requiring high reliability and efficient thermal management.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official Infineon resources or authorized distributors for verified alternative components that match the required electrical and mechanical specifications.
FAQ
What is the maximum repetitive peak reverse voltage for the rectifier diode?
The rectifier diode has a maximum repetitive peak reverse voltage of 1600 V.
Does the module include thermal monitoring capabilities?
Yes, the module integrates an NTC thermistor with a nominal resistance of 5 kΩ at 25°C for temperature monitoring.
What is the maximum operating junction temperature?
The maximum operating junction temperature is 125°C.
