FP75R12KT3BOSA1

Overview

The FP75R12KT3BOSA1 is a Trenchstop IGBT3 EconoPIM module featuring fast trench/fieldstop IGBTs and emitter-controlled high-efficiency diodes. It integrates three-phase inverter, rectifier, and brake-chopper circuits within an insulated copper baseplate. Key electrical parameters include a collector-emitter voltage of 1200 V, continuous DC collector current of 105 A at 25°C, and total power dissipation of 355 W. The module incorporates a negative temperature coefficient NTC thermistor with a rated resistance of 5 kΩ at 25°C for thermal monitoring.

Feature Summary

• Integrates fast switching IGBTs and high-efficiency diodes for optimized power conversion
• Includes integrated NTC thermistor for precise junction temperature monitoring
• Features insulated copper baseplate design for enhanced electrical isolation and heat dissipation

Applications

• Three-phase motor drives and inverters
• Induction heating systems
• Air conditioning compressor drives

Procurement Notes

Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm manufacturing origin and compliance details. Ensure that the component matches the exact datasheet revision required for your application's safety and performance standards before finalizing procurement.

Selection Notes

Select this module for applications requiring integrated braking chopper functionality alongside standard inverter and rectifier operations. Evaluate the thermal resistance values and mounting torque specifications to ensure compatibility with the system's cooling infrastructure and mechanical constraints.

Part Context

This component belongs to the Infineon EconoPIM family, designed for compact and efficient power electronics. It utilizes Trenchstop IGBT3 technology to balance switching speed and conduction losses. The module consolidates multiple semiconductor functions into a single package to reduce system footprint and parasitic inductance.

Replacement Considerations

FP75R12KT3

FAQ

What is the maximum repetitive peak collector current for the inverter IGBT?

The maximum repetitive peak collector current (ICRM) is 150 A for a pulse duration of 1 ms.

What are the thermal resistance values from junction to case?

The thermal resistance from junction to case (RthJC) is 0.35 K/W per IGBT and 0.58 K/W per diode.

Does the module include a rectifier circuit?

Yes, the module includes a rectifier section with a reverse repetitive peak voltage of 1600 V and a maximum RMS forward current of 80 A per chip.