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The FP75R12KT4B11BOSA1 is an EconoPIM™3 module featuring fast Trench/Fieldstop IGBT4 and emitter-controlled diodes with PressFIT technology. It integrates a three-phase inverter, rectifier, and brake-chopper. Key electrical parameters include a collector-emitter voltage (VCES) of 1200 V, continuous DC collector current (ICDC) of 75 A at TC=95°C, and repetitive peak current (ICRM) of 150 A. The saturation voltage (VCE,sat) is typically 1.85 V at IC=75 A and Tvj=25°C. The module includes an integrated NTC thermistor rated at 5 kΩ at 25°C.
Verify the specific ordering suffix B11BOSA1 against official Infineon documentation to confirm terminal configuration and packaging details. Ensure compatibility with PressFIT mounting requirements by consulting application notes AN2007-09 or AN2017-03 for hole specifications. Confirm industrial qualification standards such as IEC 60747 and IEC 60068 are met for the target environment.
Select this module for applications requiring a combined three-phase inverter, rectifier, and brake-chopper topology. The 1200 V rating and 75 A continuous current capacity suit medium-power industrial drives. Consider the positive temperature coefficient of VCE,sat for parallel operation stability. Verify that the system can accommodate the PressFIT termination method rather than traditional soldering.
This component belongs to the Infineon EconoPIM™3 series, which combines multiple power stages into a single compact package. It utilizes Trenchstop IGBT4 technology, balancing switching performance and conduction losses. The module is designed for industrial applications, offering robust insulation coordination with a basic insulation class according to IEC 61140.
FP75R12KT4BOSA1