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Product Detailed Parameters
- Description：IGBT MOD 1200V 75A 385W
- Series：EconoPIM™ 3
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：Trench Field Stop
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 75A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：75 A
- Power - Max：385 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：4.3 nF @ 25 V
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Overview
The FP75R12KT4B15BOSA1 is an EconoPIM™3 module integrating Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes. It features a collector-emitter voltage of 1200 V, a continuous DC collector current of 75 A at 95°C case temperature, and a total power dissipation of 385 W. The inverter IGBT exhibits a saturation voltage of 1.85 V to 2.25 V depending on junction temperature. The integrated NTC thermistor has a rated resistance of 5.00 kΩ at 25°C. The module utilizes a copper base plate, operates within a junction temperature range of -40°C to 150°C, and weighs 300 g.
Feature Summary
- Integrates fast Trench/Fieldstop IGBT4 technology with low switching losses and positive temperature coefficient for VCE(sat).
- Includes an emitter-controlled diode optimized for low reverse recovery charge and energy.
- Features a built-in NTC thermistor for precise junction temperature monitoring.
- Designed with a copper base plate and solder contact technology for high power cycling capability.
Applications
- Servo drives
- Motor drives
- Medical applications
- Auxiliary inverters
Procurement Notes
Verify the specific B15 suffix against official Infineon documentation to confirm exact manufacturing lot or revision details. Ensure compatibility with standard mounting torque specifications of 3.00 to 6.00 Nm for M5 screws. Confirm thermal interface material requirements align with the specified thermal resistance values before integration into the final system design.
Selection Notes
Select this module for three-phase inverter configurations requiring robust short-circuit withstand capability up to 270 A. Evaluate thermal management strategies based on the junction-to-case thermal resistance of 0.39 K/W per IGBT. Consider the internal gate resistor value of 10 Ω when designing external gate drive circuits to optimize switching speed and minimize electromagnetic interference.
Part Context
This component belongs to the TRENCHSTOP IGBT4 series within the EconoPIM™ product family. It represents a generation of modules designed for improved efficiency and reliability compared to previous technologies. The EconoPIM™3 form factor provides a standardized footprint suitable for various industrial power conversion systems.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Generic replacements may not match the specific switching characteristics or thermal performance of the Trench/Fieldstop IGBT4 technology.
FAQ
What is the maximum repetitive peak collector current for the inverter IGBT?
The maximum repetitive peak collector current (ICRM) is 150 A for a pulse duration of 1 ms.
Does the module include a temperature sensor?
Yes, it includes an integrated NTC thermistor with a rated resistance of 5.00 kΩ at 25°C and a B-value of 3375 K.
What is the stray inductance of the module?
The module stray inductance (LsCE) is specified as 60 nH.
