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The FP75R12N2T4B16BPSA1 is a silicon IGBT module from Infineon Technologies, belonging to the FPXR12N2X7G series. It features a 1200 V collector-emitter voltage rating and a continuous collector current of 75 A at 25°C. The device utilizes Trenchstop technology for optimized switching performance. Packaged in EconoPIM™ 2 format with screw mounting, it supports a maximum junction temperature of 175°C. This component integrates three-phase inverter and rectifier functions within a single compact unit, designed for high-efficiency power conversion applications.
Verify the complete part number including the B16 suffix against official Infineon documentation to ensure correct variant identification. Confirm RoHS compliance status and specific datasheet revision prior to ordering. Check for obsolescence notices as distribution channels may list discontinued or end-of-life inventory. Ensure compatibility with required gate drive voltages and thermal management solutions specified in the technical data sheet.
Select this module when a combined three-phase inverter and rectifier solution is required in a space-constrained design. Compare saturation voltage and switching losses against alternative Trenchstop generations for efficiency optimization. Verify that the 75 A current rating meets peak load requirements under expected operating temperatures. Ensure the EconoPIM™ 2 footprint aligns with existing PCB or baseplate designs.
This component is part of Infineon's FPXR12N2X7G family, which represents advanced Trenchstop IGBT modules. The FP75R12N2T4B16BPSA1 variant specifically targets applications requiring integrated rectification and inversion. It succeeds earlier EconoPIM designs by offering higher power density and improved thermal performance within the same mechanical envelope.
Direct replacements include FP75R12N2T4PBPSA1 and FP75R12N2T4BPSA1. Verify pinout compatibility and electrical parameters before substitution. Alternative packages such as EconoPACK may require mechanical redesign.