FP75R12N2T4BPSA1

Overview

The FP75R12N2T4BPSA1 is an EconoPIM™2 module integrating Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes with an NTC sensor. It features a collector-emitter voltage (VCES) of 1200 V, continuous DC collector current (IC nom) of 75 A at TC=95°C, and repetitive peak collector current (ICRM) of 150 A. The inverter IGBT has a typical VCEsat of 2.15 V at Tvj=125°C. Switching losses at Tvj=150°C include Eon of 13.0 mJ and Eoff of 8.0 mJ. Thermal resistance from junction to case is 0.380 K/W for the IGBT and 0.555 K/W for the diode. The module weighs 180 g.

Feature Summary

• Integrates Trench/Fieldstop IGBT4 technology with low saturation voltage and positive temperature coefficient.
• Includes an integrated NTC thermistor for reliable thermal monitoring.
• Utilizes solder contact technology on a copper baseplate for high power cycling capability.

Applications

• Servo drives
• Motor drives
• Auxiliary inverters

Procurement Notes

Verify the specific ordering suffix BPSA1 against official Infineon documentation to confirm exact configuration details. Ensure compatibility with standard mounting hardware and verify that the component meets all relevant safety standards required for the intended industrial application environment.

Selection Notes

Select this module for applications requiring robust thermal management and high power density. Consider the 1200 V rating and 75 A continuous current capacity when designing the cooling system. Evaluate the switching energy values to ensure they align with the target operating frequency and gate drive resistance requirements.

Part Context

This component belongs to the EconoPIM™2 series, designed specifically for three-phase input rectifier and inverter configurations. It combines fast Trench/Fieldstop IGBT4 chips with Emitter Controlled 4 diodes to optimize performance in motor drive and auxiliary inverter applications.

Replacement Considerations

FP75R12KT4PB11BPSA1