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The FP75R12N2T7B11BPSA2 is a PIM IGBT module utilizing TRENCHSTOP™ IGBT7 technology. It features a collector-emitter voltage of 1200 V and a nominal continuous DC collector current of 75 A, with a repetitive peak current capability of 150 A. The module incorporates an integrated NTC thermistor with a rated resistance of 5 kΩ at 25°C. Electrical characteristics include a typical collector-emitter saturation voltage of 1.55 V at 25°C and a forward diode voltage of 1.72 V. Operating junction temperatures range from -40°C to +175°C.
Verify the specific ordering suffix against official Infineon documentation to confirm mechanical interface and terminal configuration. Ensure that the component meets the required industrial qualification standards defined in IEC 60747, 60749, and 60068 before integration into the final design.
Select this module for applications requiring high overload capacity up to 175°C junction temperature. Consider the low stray inductance of 35 nH for efficient switching. Verify that the gate drive circuitry supports the specified internal gate resistor values and voltage limits for both inverter and brake-chopper configurations.
This component belongs to the EconoPIM™2 series, designed as a compact power integrated module. It combines three-phase inverter switches with a rectifier and brake-chopper stage within a single housing, facilitating space-constrained industrial power conversion designs.
Consult official Infineon cross-reference lists for verified substitutes. Generic replacements may not match the specific PressFIT terminal geometry or the electrical characteristics of the TRENCHSTOP™ IGBT7 generation.
The module supports an operating junction temperature range from -40°C to +175°C, allowing for overload operation above 150°C.
The module utilizes PressFIT contact technology for mounting, eliminating the need for traditional soldering processes.
Yes, it integrates an NTC thermistor with a rated resistance of 5 kΩ at 25°C for temperature monitoring.