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The FP75R12N2T7BPSA1 is a PIM IGBT module from Infineon Technologies, utilizing TRENCHSTOP™ IGBT7 technology. It features a collector-emitter voltage of 1200 V and a nominal continuous DC collector current of 75 A at 175°C junction temperature. The inverter IGBT has a typical saturation voltage of 1.55 V at 25°C. The integrated emitter-controlled diode exhibits a forward voltage of 1.72 V at 25°C. The module includes an NTC thermistor with a rated resistance of 5 kΩ at 25°C. It employs EconoPIM™2 packaging with solder contact technology and a copper base plate.
Verify the specific ordering suffix BPSA1 against official documentation to confirm mechanical and electrical specifications match the design requirements. Confirm RoHS compliance status and industrial qualification standards before finalizing procurement orders.
Select this component for applications requiring robust industrial-grade power conversion. Ensure the cooling system can handle the specified thermal resistance values. Verify that the gate drive circuitry supports the required voltage levels and internal gate resistor characteristics for optimal switching times.
This part belongs to the EconoPIM™2 series, designed for compact integration in modern power electronics. It combines high power density with efficient thermal management capabilities suitable for demanding industrial environments.
Consult official replacement lists or cross-reference tools provided by Infineon Technologies for verified substitute part numbers. Do not assume compatibility with other modules without verifying pinout and parameter alignment.
The maximum operating junction temperature under switching conditions is 175°C.
Yes, it integrates an NTC thermistor with a rated resistance of 5 kΩ at 25°C.
The isolation test voltage is 2.5 kV RMS at 50 Hz for 1 minute.