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The FP75R12W3T7B11BPSA1 is a three-phase inverter IGBT module from Infineon Technologies, utilizing TRENCHSTOP™ IGBT7 technology. It features a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (ICDC) of 75 A at 25°C. The module integrates emitter-controlled diodes with a forward voltage (VF) of 1.72 V at 25°C. Key electrical parameters include a typical saturation voltage (VCE,sat) of 1.55 V and a maximum repetitive peak collector current (ICRM) of 150 A. It incorporates an NTC thermistor with a rated resistance of 5 kΩ at 25°C for thermal monitoring.
Verify the specific ordering suffix against official documentation to confirm package type and terminal configuration. Ensure compliance with industrial qualification standards such as IEC 60747 and IEC 60068 before integration. Confirm that the application environment supports the specified operating temperature range and thermal management requirements defined in the datasheet.
Select this module for applications requiring high power density and robust mechanical connections via PressFIT technology. Consider the 1200 V rating and 75 A current capacity for medium-power industrial drives. Evaluate the thermal resistance values and required heatsinking to maintain junction temperatures within the specified operational limits during continuous and overload conditions.
This component belongs to the EasyPIM™ series, designed as a compact power module for three-phase inverter applications. It combines IGBTs and diodes in a single package to simplify circuit design and reduce parasitic inductance. The module is part of Infineon's broader portfolio of trench-stop technology products aimed at improving efficiency in industrial power conversion.
Direct replacements must match the 1200 V / 75 A rating, EasyPIM™ form factor, and PressFIT mounting style. Verify compatibility of internal gate resistors and switching characteristics if substituting with other TRENCHSTOP™ variants. Consult official substitution lists for confirmed equivalents.