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Product Detailed Parameters
- Description：INSULATED GATE BIPOLAR TRANSISTO
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：Field Stop
- Configuration：3 Independent
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 40A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：Module
- Supplier Device Package：F2
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：40 A
- Power - Max：156 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：-
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Overview
The FPF2G120BF07AS is an N-channel Insulated Gate Bipolar Transistor (IGBT) module manufactured by Fairchild Semiconductor. It features a collector-emitter breakdown voltage of 650V and supports a maximum continuous current of 40A. The device has a maximum power dissipation rating of 156W and is housed in the F2 supplier device package. Its on-state voltage is specified at 2.2V when tested at a gate-emitter voltage of 15V and a collector current of 40A.
Feature Summary
- N-channel IGBT configuration for high-power switching applications
- Integrated thermal management within the F2 module package
- Optimized for multi-string solar application boost topologies
Applications
- Multi-string solar photovoltaic systems
- Boost topology power conversion circuits
- High-power industrial motor drives
Procurement Notes
Verify the specific suffix 'ASP' against official documentation to confirm tray packaging details. Ensure the component matches the F2 package outline dimensions. Cross-reference the manufacturer part number with ON Semiconductor records to confirm current lifecycle status and availability constraints before procurement.
Selection Notes
Select this component for applications requiring 650V blocking capability and 40A current handling. The 2.2V Vce(on) characteristic influences conduction losses. Consider the 156W power dissipation limit for thermal design. Verify compatibility with the intended PCB footprint for the F2 package type during the initial design phase.
Part Context
Fairchild Semiconductor, now part of ON Semiconductor, produces this IGBT module as part of their high-power discrete and module portfolio. The FPF series typically targets efficient power conversion solutions. This specific model utilizes the F2 package format, designed for robust performance in demanding energy conversion environments.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Consult official cross-reference guides from ON Semiconductor for potential alternatives.
