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The FPNH10 is an NPN RF transistor designed for low noise UHF/VHF amplifiers and high output UHF oscillators. It operates with collector currents between 100 µA and 20 mA in common emitter or base modes. Key electrical parameters include a collector-emitter voltage (VCEO) of 25 V, collector-base voltage (VCBO) of 30 V, and continuous collector current (IC) of 50 mA. The device features a gain-bandwidth product (fT) of 650 MHz at IC = 4.0 mA and VCE = 10 V. Total power dissipation is 350 mW, with a junction-to-ambient thermal resistance of 357 °C/W. Operating temperature ranges from -55 °C to +150 °C.
Verify the manufacturer origin carefully, as the component was originally produced by Fairchild Semiconductor. Confirm that the specific revision matches the required datasheet specifications. Ensure the TO-92 package variant aligns with the intended PCB layout constraints before finalizing procurement orders.
Select this component when designing circuits requiring low noise figures in the UHF/VHF spectrum. Verify that the 25 V collector-emitter rating and 50 mA continuous current limits accommodate the maximum expected operating conditions. Consider the 350 mW power dissipation capability and thermal management requirements for the specific application environment.
The FPNH10 belongs to the category of NPN RF transistors sourced from Process 42. It serves as a specialized discrete semiconductor device for radio frequency applications. The component is housed in a TO-92 package, providing a compact form factor suitable for various electronic assemblies requiring small-signal RF performance.
Consult official documentation for verified substitute part numbers. Cross-referencing requires matching the NPN configuration, 25 V VCEO rating, and TO-92 package type to ensure functional compatibility in existing designs.