FQA46N15_F109

$1.05

Description：MOSFET N-CH 150V 50A TO3P
Series：QFET®
Mfr：onsemi
Package：Tube

SKU:0d410a497c9a Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FQA46N15_F109 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 150V 50A TO3P. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQA46N15_F109

Description：MOSFET N-CH 150V 50A TO3P
Series：QFET®
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：42mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：110 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：3250 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：250W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3P
Package / Case：TO-3P-3, SC-65-3

Single FETs, MOSFETs datasheet and documents for FQA46N15_F109

FQA46N15_F109

Single FETs, MOSFETs Overview

The onsemi FQA46N15_F109 is an N-Channel enhancement mode power MOSFET manufactured using proprietary planar stripe and DMOS technology. It features a 150V drain-source voltage rating, a continuous drain current of 50A at 25°C case temperature, and a maximum static drain-source on-resistance of 42mΩ at VGS=10V. The device supports a pulsed drain current of 200A and offers a single pulsed avalanche energy capability of 650mJ. It operates with a maximum junction temperature of 175°C and utilizes a TO-3PN package.

Single FETs, MOSFETs Feature Summary

Utilizes advanced planar stripe and DMOS technology to minimize on-state resistance and enhance switching performance.
Engineered for high avalanche energy strength and superior dv/dt capability during commutation modes.
Includes 100% avalanche testing to ensure reliability under extreme pulse conditions.

Single FETs, MOSFETs Applications

Switched mode power supplies
Audio amplifiers
DC motor control
Variable switching power applications

Single FETs, MOSFETs Procurement Notes

Verify the authenticity of the component by checking markings against official datasheet specifications. Confirm the manufacturer origin, as Fairchild Semiconductor was acquired by onsemi. Ensure the ordering suffix matches the required reel size and tape width configuration. Purchase only from authorized distributors to avoid counterfeit parts that may lack specified electrical characteristics or thermal ratings.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage, high-current applications requiring robust avalanche ruggedness. The TO-3PN package provides efficient heat dissipation suitable for high-power density designs. Consider the 175°C maximum junction temperature rating for high-temperature environments. Evaluate the gate charge requirements against the driver capabilities to optimize switching losses in the target circuit topology.

Single FETs, MOSFETs Part Context

This device belongs to the FQA series of N-Channel QFET MOSFETs originally developed by Fairchild Semiconductor. The series is characterized by its use of proprietary planar stripe and DMOS processes designed to reduce conduction losses while maintaining high breakdown voltage capabilities. The FQA46N15 represents a specific variant optimized for 150V operation with high current handling.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same family include the FQA46N15 without the suffix. Other variants in the FQA series offer different voltage and current ratings but share similar packaging and technological foundations. Verify pinout compatibility and thermal resistance values when considering alternative part numbers.