FQB3N25TM

Single FETs, MOSFETs Overview

The onsemi FQB3N25TM is a 250V N-Channel enhancement mode power MOSFET utilizing planar stripe DMOS technology. It features a maximum continuous drain current of 2.8A at 25°C and a typical on-state resistance of 1.75Ω at VGS=10V. The device includes an integrated body diode with a peak reverse recovery dv/dt rating of 5.5V/ns. It is housed in a D2PAK surface-mount package, offering a junction-to-case thermal resistance of 2.78°C/W and a maximum operating temperature of 150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes proprietary planar stripe DMOS technology to minimize on-state resistance while maintaining superior switching performance.
• Engineered to withstand high energy pulses in avalanche and commutation modes, ensuring robust operation under transient conditions.
• Features improved dv/dt capability for the internal body diode, enhancing reliability during fast switching transitions.

Single FETs, MOSFETs Applications

• High efficiency switching DC/DC converters
• Switch mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'TM' against the manufacturer's official documentation to confirm the exact tape-and-reel packaging configuration. Ensure that the component source matches the original Fairchild Semiconductor lineage now managed by onsemi to guarantee datasheet parameter consistency. Confirm RoHS compliance status for the specific manufacturing lot prior to integration into final assemblies.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low gate charge and fast switching speeds within a 250V voltage range. The D2PAK package provides adequate thermal dissipation for moderate power levels up to 45W when mounted on a heatsink. Evaluate the 2.8A continuous current limit against peak load requirements to ensure safe operation within the specified thermal boundaries.

Single FETs, MOSFETs Part Context

This device belongs to the QFET series produced originally by Fairchild Semiconductor and subsequently acquired by onsemi. The QFET line utilizes advanced DMOS processes optimized for low RDS(on) and high avalanche energy tolerance. This specific part represents a standard N-channel solution for general-purpose power switching applications where compact surface-mount packaging is required.

Single FETs, MOSFETs Replacement Considerations

The FQI3N25TM is the lead-free equivalent variant of this component. Verify pinout compatibility and thermal characteristics when substituting between the FQB and FQI prefixes to ensure identical electrical performance and mechanical fit.