FQB7N30TM

Single FETs, MOSFETs Overview

The FQB7N30TM is a single N-Channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor. It utilizes proprietary planar stripe and DMOS technology to achieve low on-state resistance and superior switching performance. The device features a drain-source voltage rating of 300 V and a continuous drain current of 5.5 A at case temperature. Key electrical parameters include a maximum Rds(on) of 700 mΩ at Vgs = 10 V, a gate charge of 17 nC, and an avalanche energy rating of 290 mJ. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• High avalanche energy strength for robust operation in inductive load applications
• Low gate charge characteristics enabling efficient high-frequency switching
• Proprietary planar stripe and DMOS technology for minimized on-state resistance

Single FETs, MOSFETs Applications

• Switched mode power supplies (SMPS)
• Active power factor correction (PFC) circuits
• Electronic lamp ballasts

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels due to the prevalence of counterfeit power semiconductors. Confirm that the specific marking code matches the original Fairchild Semiconductor manufacturing standards. Ensure storage conditions comply with moisture sensitivity level requirements prior to surface mount assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high-voltage blocking capability combined with moderate current handling. The TO-263 package facilitates effective thermal dissipation for power management applications. Evaluate thermal resistance values against system heat sink capabilities to ensure junction temperatures remain within safe operating limits during continuous conduction.

Single FETs, MOSFETs Part Context

This part belongs to the FQB series of N-Channel Power MOSFETs from Fairchild Semiconductor. The series is engineered for general-purpose power switching applications where efficiency and reliability are critical. The device integrates a body diode suitable for freewheeling operations in bridge configurations.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 300V voltage rating, N-channel configuration, and TO-263 package footprint. Verify that substitute components offer equivalent or superior avalanche energy ratings and gate charge specifications to maintain circuit performance integrity.