FQB85N06TM

Single FETs, MOSFETs Overview

The FQB85N06TM is an N-channel power MOSFET from the QFET series, manufactured by Fairchild Semiconductor. It features a TO-263 (D2PAK) surface-mount package with a maximum drain-source voltage of 60V and a continuous drain current of 85A at case temperature. The device exhibits a typical on-resistance of 7.5mΩ to 10mΩ at Vgs=10V. Maximum power dissipation is rated at 3.75W at ambient temperature and 160W at case temperature. Key electrical limits include a gate-source voltage of ±25V, maximum input capacitance of 4120pF, and maximum gate charge of 112nC.

Single FETs, MOSFETs Feature Summary

• High current handling capability with low on-resistance for efficient power switching
• Integrated body diode for inductive load applications
• Enhanced thermal performance via direct die-to-tab construction
• Lead-free packaging compliant with environmental standards

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Motor control systems
• Power supply output stages

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or its successor ON Semiconductor. Confirm the specific suffix indicates the lead-free D2PAK package. Ensure the component status is active before procurement. Cross-reference datasheet revisions to confirm parameter consistency. Validate authenticity through authorized distribution channels only.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current density in compact surface-mount designs. The 60V rating suits low-voltage DC systems. Consider the thermal resistance when designing heat sinks, as power dissipation varies significantly between ambient and case conditions. Verify gate drive requirements align with the specified threshold and charge parameters.

Single FETs, MOSFETs Part Context

This part belongs to the QFET series of single N-channel MOSFETs. It utilizes planar trench technology to achieve low on-resistance. The D2PAK package provides robust mechanical stability and thermal conductivity. Fairchild Semiconductor developed this line for high-efficiency power management solutions.

Single FETs, MOSFETs Replacement Considerations

Check for equivalent parts with matching 60V/85A ratings and TO-263 packages. Verify pinout compatibility and thermal characteristics. Ensure substitute components meet the same electrical specifications for on-resistance and gate charge.