ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
FQD20N06LTM is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 17.2A DPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FQD20N06LTM
- Description：MOSFET N-CH 60V 17.2A DPAK
- Series：QFET®
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：17.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：60mOhm @ 8.6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：630 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 38W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for FQD20N06LTM
Single FETs, MOSFETs Overview
The FQD20N06LTM is a single N-Channel enhancement mode MOSFET manufactured by onsemi. It features a DPAK-3 (TO-252-3) surface-mount package and utilizes silicon technology. The device has a drain-source breakdown voltage of 60 V and supports a continuous drain current of 17.2 A. Its maximum on-state resistance is 60 mOhms at a gate-source voltage of 10 V. The component operates within a temperature range of -55 C to +150 C junction temperature, with a power dissipation rating of 2.5 W.
Single FETs, MOSFETs Feature Summary
- Logic level gate drive capability for efficient control
- Optimized low on-state resistance for high efficiency
- Enhanced switching performance characteristics
Single FETs, MOSFETs Applications
- DC/DC converter circuits
- Automotive power management systems
- High-efficiency switching applications in portable products
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and tape specifications. Confirm RoHS compliance status through the latest datasheet revision. Ensure the component matches the required DPAK-3 footprint and pinout configuration for the target PCB design before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a 60 V N-Channel MOSFET with logic-level gate drive is required in a DPAK-3 package. Consider the 17.2 A continuous current rating and 60 mOhm on-resistance for thermal management calculations. Verify that the 2.5 W power dissipation rating aligns with the application's thermal constraints and operating environment requirements.
Single FETs, MOSFETs Part Context
This part belongs to the QFET family from onsemi, designed using planar stripe DMOS technology. The series targets low-voltage applications requiring minimized on-state resistance and superior switching performance. It is engineered to withstand high energy pulses in avalanche and commutation modes, making it suitable for robust power management solutions.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the same QFET family or equivalent 60 V N-Channel devices in TO-252 packages. Verify electrical parameter compatibility, including Rds(on), Id, and Vgs thresholds, before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
