FQD4P40TF

$0.51

Description：MOSFET P-CH 400V 2.7A DPAK
Series：QFET®
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:95b9a9b4d848 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FQD4P40TF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 400V 2.7A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQD4P40TF

Description：MOSFET P-CH 400V 2.7A DPAK
Series：QFET®
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：400 V
Current - Continuous Drain (Id) @ 25°C：2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.1Ohm @ 1.35A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：23 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：680 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 50W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for FQD4P40TF

FQD4P40TF

Single FETs, MOSFETs Overview

The FQD4P40TF is a P-Channel enhancement mode power MOSFET manufactured by onsemi, utilizing planar stripe DMOS technology. It features a -400V drain-source voltage rating and a continuous drain current of -2.7A at 25°C case temperature. The device exhibits a maximum on-resistance of 3.1Ω at VGS = -10V. Key electrical parameters include a typical gate charge of 18nC and reverse transfer capacitance of 11pF. It operates within a junction temperature range of -55°C to +150°C and is housed in a DPAK (TO-252-3) surface-mount package.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and enhance switching performance.
Capable of withstanding high energy pulses in avalanche and commutation modes, verified through 100% avalanche testing.
Designed for improved dv/dt capability to support reliable operation in half-bridge configurations.

Single FETs, MOSFETs Applications

Electronic lamp ballasts based on complementary half-bridge topologies
High-side switching applications requiring robust avalanche ruggedness
Power management circuits benefiting from low gate charge characteristics

Single FETs, MOSFETs Procurement Notes

Verify the component origin as this part was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific ordering suffix matches the required packaging format, such as tape and reel or cut tape, as availability may vary across authorized distributors. Ensure compliance with RoHS standards if applicable to your manufacturing requirements.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a high-voltage P-Channel MOSFET with moderate current handling capabilities. The low gate charge and fast switching speeds make it suitable for applications where efficiency and thermal management are critical. Consider the thermal resistance values when determining heat sinking requirements for continuous operation.

Single FETs, MOSFETs Part Context

This device belongs to the QFET series of power MOSFETs, which are engineered for general-purpose power switching applications. The series emphasizes reliability and performance through advanced semiconductor processing techniques. It serves as a complement to N-Channel devices in bridge configurations, providing balanced switching characteristics for efficient power conversion systems.

Single FETs, MOSFETs Replacement Considerations

The datasheet explicitly lists the FQU4P40 as a related variant within the same family. Verify pinout compatibility and thermal specifications when substituting with other P-Channel MOSFETs from different manufacturers. Ensure that any replacement meets or exceeds the -400V breakdown voltage and current ratings required by the original design.