FQI10N60CTU

Single FETs, MOSFETs Overview

The FQI10N60CTU is an N-channel enhancement mode power MOSFET manufactured by onsemi, formerly Fairchild Semiconductor. It utilizes QFET technology and is housed in a TO-262 (I2PAK) package. The device features a drain-source voltage rating of 600 V and a continuous drain current of 9.5 A at case temperature. Key electrical parameters include a maximum gate-source voltage of ±30 V, a threshold voltage of 4 V at 250 µA, and a maximum gate charge of 57 nC at 10 V. The input capacitance is rated at 2040 pF at 25 V, with a maximum on-resistance of 730 mΩ at 4.75 A and 10 V.

Single FETs, MOSFETs Feature Summary

• Utilizes proprietary QFET planar stripe DMOS technology for minimized on-state resistance and superior switching performance.
• Engineered to withstand high energy pulses during avalanche and commutation modes.
• Features internal gate-source ESD protection capable of tolerating over 2000V HBM surge stress.

Single FETs, MOSFETs Applications

• High efficiency switch mode power supplies
• Power factor correction circuits
• General purpose inverters

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation carefully, as this component was originally produced by Fairchild Semiconductor and is now managed by onsemi following corporate restructuring. Confirm the specific suffix 'CTU' corresponds to the I2PAK/TO-262 package variant. Check for active status or obsolescence notices, as distribution channels may list legacy inventory from different manufacturing eras.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust 600V blocking capability with moderate current handling in through-hole mounting configurations. The TO-262 package offers higher thermal dissipation compared to standard surface-mount options. Ensure the driver circuit can support the specified gate charge and voltage thresholds for optimal switching efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the QFET family of high-voltage MOSFETs designed for general-purpose power switching. The series is characterized by advanced silicon processing that balances low conduction losses with high reliability under transient conditions. It serves as a discrete solution for medium-power conversion systems where ruggedness against electrical overstress is critical.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and thermal characteristics if considering alternative manufacturers' equivalents.