FQN1N60CTA

$0.73

Description：MOSFET N-CH 600V 300MA TO92-3
Series：QFET®
Mfr：onsemi
Package：Cut Tape (CT),Tape & Box (TB)

SKU:c7c6a53c5741 Category: Single FETs, MOSFETs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

FQN1N60CTA is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 600V 300MA TO92-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQN1N60CTA

Description：MOSFET N-CH 600V 300MA TO92-3
Series：QFET®
Mfr：onsemi
Package：Cut Tape (CT),Tape & Box (TB)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：11.5Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.2 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：170 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1W (Ta), 3W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92-3
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Single FETs, MOSFETs datasheet and documents for FQN1N60CTA

FQN1N60CTA

Single FETs, MOSFETs Overview

The FQN1N60CTA is a single N-channel power MOSFET manufactured by onsemi, belonging to the QFET family. It features a 600V drain-source voltage rating and a continuous drain current of 1.2A at case temperature. The device utilizes an I2PAK (TO-262) through-hole package with long leads for enhanced thermal performance. Key electrical parameters include a maximum on-resistance of 730 mΩ at Vgs=10V and a gate charge of 57 nC. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

High-voltage capability with 600V breakdown voltage for robust operation in demanding circuits.
Integrated body diode with specified reverse recovery characteristics suitable for bridge applications.
Enhanced thermal design via the I2PAK package with long leads for efficient heat dissipation.
Fast switching performance optimized for high-frequency power conversion tasks.

Single FETs, MOSFETs Applications

High-efficiency DC-to-DC converters
PWM motor control systems
Bridge circuit topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'CTA' against the official datasheet to confirm lead frame plating and tape-and-reel packaging specifications. Ensure the component matches the I2PAK footprint requirements. Confirm RoHS compliance status as indicated in the manufacturer's documentation before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 600V N-channel MOSFET is required in a through-hole I2PAK package. It is suitable for applications needing moderate current handling with low on-resistance. Consider the thermal resistance characteristics of the TO-262 package for heatsinking requirements in your specific design environment.

Single FETs, MOSFETs Part Context

This part belongs to the QFET series from onsemi, designed for high-voltage power switching applications. The QFET technology focuses on optimizing the trade-off between conduction losses and switching speed. The FQN1N60CTA variant specifically targets designs requiring reliable performance in industrial and consumer power supplies.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible replacements with similar Vds, Id, and Rds(on) ratings. Verify that any substitute maintains the same I2PAK package dimensions and thermal characteristics to ensure mechanical fit and thermal management integrity in existing PCB layouts.