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FQP3N60 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH 600V 3A TO220-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FQP3N60
- Description：MOSFET N-CH 600V 3A TO220-3
- Series：QFET®
- Mfr：Fairchild Semiconductor
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.6Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：450 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：75W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for FQP3N60
Single FETs, MOSFETs Overview
The FQP3N60 is a 600V N-Channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor. It utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and enhance switching performance. The device features a single-element configuration with an integrated body diode, housed in a TO-220 package. Key electrical parameters include a drain-source breakdown voltage of 600V, a continuous drain current of 3A, and a maximum drain-source on-resistance of 3.6 ohms at VGS = 10V. It is designed for high efficiency switch-mode power supply applications.
Single FETs, MOSFETs Feature Summary
- Utilizes proprietary planar stripe DMOS technology for minimized on-state resistance
- Provides superior switching performance and fast switching capabilities
- Capable of withstanding high energy pulses in avalanche and commutation modes
- Features improved dv/dt capability for robust operation
Single FETs, MOSFETs Applications
- High efficiency switch mode power supplies
- General purpose power switching applications
- DC-DC converter circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific revision or suffix code against the manufacturer's latest datasheet to ensure compatibility with current RoHS standards and pinout configurations. Confirm that the TO-220 package variant matches the thermal requirements of the target design. Cross-reference part numbers with ON Semiconductor documentation if sourcing from acquired inventory lines.
Single FETs, MOSFETs Selection Notes
Select this component when a 600V rating is required with moderate current handling up to 3A. The 3.6 ohm on-resistance makes it suitable for low-power or isolated secondary side applications where conduction losses must be balanced against cost. Ensure gate drive voltages support the 10V threshold for optimal RDS(on) performance.
Single FETs, MOSFETs Part Context
This device belongs to Fairchild's FQP series of N-Channel Power MOSFETs. It shares architectural similarities with the FQD3N60 but differs in packaging, utilizing the TO-220 form factor instead of TO-252. The series is characterized by its use of advanced DMOS processes tailored for high-voltage discrete power applications.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes may include the FQD3N60 if package adaptation is feasible. Other compatible alternatives within the same voltage and current class should be evaluated based on on-resistance and thermal characteristics.
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