FQP3N90

$0.48

Description：MOSFET N-CH 900V 3.6A TO220-3
Series：QFET®
Mfr：onsemi
Package：Tube

SKU:791e399ce795 Category: Single FETs, MOSFETs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

FQP3N90 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 900V 3.6A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQP3N90

Description：MOSFET N-CH 900V 3.6A TO220-3
Series：QFET®
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.25Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：910 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：130W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for FQP3N90

FQP3N90

Single FETs, MOSFETs Overview

The FQP3N90 is a 900V N-Channel enhancement mode power MOSFET manufactured using planar stripe DMOS technology. It features a maximum continuous drain current of 3.6A at 25°C and a static drain-source on-resistance of 4.25Ω at VGS=10V. The device has a single pulsed avalanche energy rating of 450mJ and a peak diode recovery dv/dt of 4.0V/ns. Total gate charge is typically 20nC, with reverse transfer capacitance at 8.0pF. Power dissipation reaches 130W at 25°C case temperature.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and enhance switching performance.
Capable of withstanding high energy pulses in both avalanche and commutation modes.
Includes improved dv/dt capability for robust operation during body diode recovery.

Single FETs, MOSFETs Applications

High efficiency switch mode power supplies
High voltage power switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the component status carefully as this part was originally produced by Fairchild Semiconductor International. Confirm that the specific unit acquired matches the original datasheet specifications, particularly regarding the TO-220 package dimensions and electrical limits, since manufacturing rights may have transferred to other entities such as onsemi.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high voltage blocking capabilities up to 900V. Ensure the thermal management system can handle the specified junction-to-case thermal resistance of 0.96°C/W. Verify that the gate drive voltage meets the 10V requirement to achieve the minimum on-resistance specification.

Single FETs, MOSFETs Part Context

This device belongs to the QFET series of power MOSFETs designed for high-voltage applications. It represents an evolution of planar DMOS technology aimed at balancing low conduction losses with fast switching speeds. The TO-220 package provides a standardized mounting solution for through-hole assembly in industrial and consumer power electronics.