FQP5N90

$0.68

Description：MOSFET N-CH 900V 5.4A TO220-3
Series：QFET®
Mfr：onsemi
Package：Tube

SKU:600fc23bdf8c Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FQP5N90 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 900V 5.4A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQP5N90

Description：MOSFET N-CH 900V 5.4A TO220-3
Series：QFET®
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.3Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1550 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：158W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for FQP5N90

FQP5N90

Single FETs, MOSFETs Overview

The FQP5N90 is a 900V N-Channel enhancement mode power MOSFET manufactured using planar stripe DMOS technology. It features a maximum continuous drain current of 5.4A at 25°C and a static drain-source on-resistance of 2.3Ω at VGS=10V. The device offers a typical gate charge of 31nC and reverse transfer capacitance of 13pF, supporting fast switching performance. It withstands single pulsed avalanche energy of 660mJ and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary planar stripe DMOS technology for minimized on-state resistance and superior switching performance.
Capable of withstanding high energy pulses in both avalanche and commutation modes.
Features improved dv/dt capability and low gate charge characteristics.

Single FETs, MOSFETs Applications

High efficiency switch mode power supplies
Unclamped inductive switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific revision status and manufacturer origin, as the component was originally produced by Fairchild Semiconductor before acquisition by onsemi. Confirm that the TO-220 package dimensions match the design requirements. Ensure compliance with the life support policy restrictions if the application involves critical systems requiring explicit written approval.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage blocking capabilities up to 900V with moderate current handling. The TO-220 package facilitates through-hole mounting and heat sinking. Consider the thermal resistance values when calculating power dissipation limits under continuous or pulsed load conditions to ensure operation remains within safe operating area boundaries.

Single FETs, MOSFETs Part Context

This part belongs to the QFET series of power MOSFETs designed for high-voltage applications. The series emphasizes robust avalanche ruggedness and efficient switching characteristics suitable for demanding power conversion environments.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for other 900V N-Channel MOSFETs in the TO-220 package with comparable Rds(on) and avalanche energy ratings. Verify pinout compatibility and thermal performance metrics before substitution.