FQPF17N08

$0.31

Description：MOSFET N-CH 80V 11.2A TO220F
Series：QFET®
Mfr：onsemi
Package：Tube

SKU:8b661dedf7a9 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FQPF17N08 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 80V 11.2A TO220F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQPF17N08

Description：MOSFET N-CH 80V 11.2A TO220F
Series：QFET®
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：11.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：115mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：450 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：30W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F-3
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for FQPF17N08

FQPF17N08

Single FETs, MOSFETs Overview

The FQPF17N08 is an N-Channel enhancement mode power MOSFET manufactured using planar stripe DMOS technology. It features a drain-source voltage of 80V and a continuous drain current of 11.2A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.115Ω at VGS=10V. Key electrical parameters include a typical gate charge of 12nC, reverse transfer capacitance of 28pF, and avalanche energy rating of 100mJ. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary planar stripe DMOS technology for minimized on-state resistance and superior switching performance.
Capable of withstanding high energy pulses in avalanche and commutation modes.
Features improved dv/dt capability and fast switching characteristics.

Single FETs, MOSFETs Applications

Low voltage automotive applications
High efficiency DC/DC converter switching
DC motor control

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm the datasheet revision matches the specific production lot requirements. Ensure compliance with RoHS directives if applicable to the target market. Review absolute maximum ratings carefully to prevent device failure during operation.

Single FETs, MOSFETs Selection Notes

Select this component for low voltage power switching environments requiring robust avalanche ruggedness. Evaluate thermal management needs based on the specified junction-to-case thermal resistance. Consider the gate charge specifications when designing drive circuits for optimal switching efficiency. Verify package compatibility with existing PCB layouts.

Single FETs, MOSFETs Part Context

This device belongs to the QFET series produced by Fairchild Semiconductor International. It represents a discrete power transistor designed for general-purpose switching applications. The TO-220F package provides mechanical stability and thermal dissipation capabilities suitable for through-hole mounting configurations.