FQPF18N20V2

$1.21

Description：MOSFET N-CH 200V 18A TO220F
Series：QFET®
Mfr：Fairchild Semiconductor
Package：Tube

SKU:ed187e252261 Category: Single FETs, MOSFETs Brand: Fairchild Semiconductor

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Product introduction

FQPF18N20V2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH 200V 18A TO220F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQPF18N20V2

Description：MOSFET N-CH 200V 18A TO220F
Series：QFET®
Mfr：Fairchild Semiconductor
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：140mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1080 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：40W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F-3
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for FQPF18N20V2

FQPF18N20V2

Single FETs, MOSFETs Overview

The FQPF18N20V2 is an N-channel enhancement mode MOSFET manufactured by Fairchild Semiconductor. It features a maximum drain-source voltage of 500 V and a continuous drain current of 18 A. The device utilizes a TO-220F package for through-hole mounting with three pins. Key electrical parameters include a maximum on-resistance of 265 mΩ, a maximum power dissipation of 69 W, and a gate-source voltage range of -30 V to +30 V. The component operates within a temperature range of -55 °C to +150 °C, with a typical gate charge of 42 nC at 10 V.

Single FETs, MOSFETs Feature Summary

N-channel enhancement mode construction
TO-220F through-hole package design
High voltage and current handling capability

Single FETs, MOSFETs Applications

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation as Fairchild Semiconductor or its successor entity onsemi during procurement. Confirm the specific suffix 'V2' matches the required datasheet revision. Ensure the TO-220F package type aligns with the intended PCB layout requirements. Cross-reference the part number against official distributor catalogs to confirm availability status.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust high-voltage switching in through-hole designs. The 500 V rating suits general-purpose power conversion tasks. Evaluate thermal management needs based on the 69 W dissipation limit. Compare the 265 mΩ on-resistance against circuit efficiency targets. Verify compatibility with standard gate drive voltages.

Single FETs, MOSFETs Part Context

This device belongs to the Power MOSFET category, specifically designed for power switching applications. It represents a discrete semiconductor solution for managing electrical loads in electronic circuits. The TO-220F form factor provides mechanical stability and heat dissipation capabilities suitable for various industrial and consumer electronics assemblies.