FQPF3N25

Single FETs, MOSFETs Overview

The FQPF3N25 is a single N-channel enhancement mode MOSFET manufactured by onsemi, utilizing silicon technology within the QFET series. It features a TO-220F-3 through-hole package designed for high-voltage applications with a drain-source voltage rating of 250 V. The device supports a continuous drain current of 2.3 A at case temperature and dissipates up to 27 W. Key electrical characteristics include a maximum gate-source voltage of ±30 V, a threshold voltage of 5 V at 250 µA, and a maximum on-resistance of 2.2 Ω at 1.15 A and 10 V. Operating temperatures range from -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with a 250 V drain-source breakdown voltage rating suitable for demanding power switching environments.
• Enhancement mode operation optimized for low gate charge and fast switching performance typical of the QFET architecture.
• Robust thermal management design integrated into the TO-220F-3 flange mount package for efficient heat dissipation.

Single FETs, MOSFETs Applications

• High-voltage DC-DC converter circuits
• Power supply output rectification stages
• Motor control drive systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity and datasheet alignment before integration, as this part is officially marked obsolete by the manufacturer. Confirm that substitute components meet identical voltage, current, and thermal specifications. Ensure compliance with RoHS directives and check for specific material composition declarations required for your manufacturing standards. Validate package dimensions against existing PCB footprints to prevent mechanical assembly errors during replacement.

Single FETs, MOSFETs Selection Notes

Select this component when a 250 V rated N-channel MOSFET is required in a through-hole configuration. The TO-220F-3 package provides isolation capabilities essential for certain mounting scenarios. Consider the 2.2 Ω on-resistance and 2.3 A current limit to ensure adequate thermal headroom for the intended load. Verify that the 5 V threshold voltage aligns with the available gate drive signal levels in the target circuit design.

Single FETs, MOSFETs Part Context

This device belongs to the QFET family of power transistors from onsemi, known for combining high voltage ratings with efficient switching characteristics. The FQPF3N25 specifically targets applications requiring reliable performance in harsh thermal environments. As an obsolete part, it represents a legacy solution previously utilized in industrial and consumer power electronics where robustness and high voltage tolerance were primary design constraints.

Single FETs, MOSFETs Replacement Considerations

RCX120N25 by Rohm Semiconductor is listed as an available substitute. STF16NF25 by STMicroelectronics is also identified as an alternative option. Verify pinout compatibility and electrical parameter equivalence before substituting these parts in existing designs.