FQPF3N80CYDTU

Single FETs, MOSFETs Overview

The FQPF3N80CYDTU is an N-Channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor. It features a drain-to-source voltage rating of 800 V and a continuous drain current of 3 A at case temperature. The device exhibits a maximum on-state resistance of 4.8 Ω at a gate drive voltage of 10 V. Packaged in a TO-220AB format, it complies with RoHS standards.

Single FETs, MOSFETs Feature Summary

• Utilizes proprietary planar stripe technology for optimized performance
• Designed to minimize on-state resistance for efficiency
• Provides superior switching capabilities
• Engineered for high avalanche energy strength

Single FETs, MOSFETs Applications

• Switched mode power supplies
• Active power factor correction circuits
• Electronic lamp ballasts

Single FETs, MOSFETs Procurement Notes

Verify the component authenticity against official Fairchild or ON Semiconductor documentation. Confirm that the specific suffix matches the required electrical characteristics and packaging type. Ensure compliance with relevant environmental directives before integration into final assemblies.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage blocking capability with moderate current handling. The 800 V rating suits industrial applications. Evaluate thermal management requirements due to the specified on-resistance values under load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Fairchild QFET MOSFET family, which employs advanced planar stripe and DMOS technologies. These devices are engineered to reduce conduction losses while maintaining robust switching performance and reliability in demanding power electronics environments.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for equivalents such as the FQPF3N80C variant. Verify pinout compatibility and electrical parameter alignment before implementation.