ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
FQPF5N60CYDTU is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH 600V 4.5A TO220F-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FQPF5N60CYDTU
- Description：MOSFET N-CH 600V 4.5A TO220F-3
- Series：QFET®
- Mfr：Fairchild Semiconductor
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.5Ohm @ 2.25A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：670 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：33W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3 (Y-Forming)
- Package / Case：TO-220-3 Full Pack, Formed Leads
Single FETs, MOSFETs datasheet and documents for FQPF5N60CYDTU
Single FETs, MOSFETs Overview
The FQPF5N60CYDTU is an N-channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor. It utilizes Q-FET advanced C-Series planar stripe and DMOS technology to minimize on-state resistance and enhance switching performance. The device features a maximum drain-source voltage of 600 V and a continuous drain current of 4.5 A. It operates within a temperature range of -55 °C to +150 °C, with a maximum power dissipation of 33 W. The component is housed in a TO-220F package for through-hole mounting.
Single FETs, MOSFETs Feature Summary
- Utilizes Q-FET advanced C-Series planar stripe and DMOS technology for minimized on-state resistance.
- Designed to withstand high energy pulses in avalanche and commutation modes.
- Provides superior switching performance suitable for efficient power conversion.
Single FETs, MOSFETs Applications
- High efficiency switched mode power supplies
- Active power factor correction circuits
- Electronic lamp ballasts based on half bridge topology
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'YDTU' against official Fairchild or onsemi documentation, as standard listings often reference 'FQPF5N60C'. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure the component matches the required TO-220F package and electrical ratings for your design.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring robust avalanche capability and low conduction loss. The 600V rating supports high-voltage AC/DC conversion systems. Consider the thermal management requirements associated with the TO-220F package and 33 W power dissipation limit during circuit design.
Single FETs, MOSFETs Part Context
This part belongs to the Fairchild (now onsemi) Q-FET family, known for high reliability in power electronics. The integration of Fairchild into onsemi means datasheets may reflect either brand name. This specific model targets general-purpose high-efficiency switching applications where system reliability is critical.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include the FQPF5N60C. Verify pinout compatibility and ensure the replacement meets the same 600V breakdown voltage and 4.5A current specifications. Check for any differences in gate charge or thermal characteristics if operating near limits.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
