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FQPF7N65CYDTU is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is POWER FIELD-EFFECT TRANSISTOR, N. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FQPF7N65CYDTU
- Description：POWER FIELD-EFFECT TRANSISTOR, N
- Series：QFET®
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.4Ohm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1245 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：52W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3 (Y-Forming)
- Package / Case：TO-220-3 Full Pack, Formed Leads
Single FETs, MOSFETs datasheet and documents for FQPF7N65CYDTU
Single FETs, MOSFETs Overview
The FQPF7N65CYDTU is a discontinued N-channel Power MOSFET manufactured by onsemi, formerly Fairchild Semiconductor. It utilizes the Advance Q-FET C-Series technology and is housed in a TO-220-3 through-hole package. Key electrical specifications include a drain-source breakdown voltage (Vds) of 650 V and a continuous drain current (Id) of 7 A at case temperature. The device features a maximum on-resistance (Rds(on)) of 1.4 Ohms at a gate-source voltage of 10 V. It operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 52 W.
Single FETs, MOSFETs Feature Summary
- Advanced Q-FET C-Series silicon technology for optimized performance
- High voltage capability suitable for demanding power applications
- Through-hole mounting configuration for robust mechanical stability
Single FETs, MOSFETs Applications
- Switch-mode power supplies
- DC-DC converters
- Motor control circuits
Single FETs, MOSFETs Procurement Notes
This component is officially listed as obsolete or discontinued by the manufacturer. Verification of availability requires checking secondary market distributors or surplus suppliers. Ensure that any sourced units are genuine and match the original datasheet specifications, particularly regarding lead-free compliance and RoHS status, as manufacturing processes may vary across production lots.
Single FETs, MOSFETs Selection Notes
Select this part only if the specific 650V rating and 7A current limit align with the circuit requirements. Consider the 1.4 Ohm on-resistance impact on conduction losses. Due to its discontinuation, evaluate alternative components from the same family or newer generations that offer improved thermal characteristics or lower on-resistance while maintaining the TO-220-3 footprint for compatibility.
Single FETs, MOSFETs Part Context
The FQPF7N65CYDTU belongs to the FQPF7N65C series of high-voltage N-channel MOSFETs. This series was designed to provide a balance of low on-resistance and fast switching speeds. The 'DTU' suffix typically denotes the specific tape-and-reel or tube packaging variant used for distribution, although the primary package remains TO-220-3.
Single FETs, MOSFETs Replacement Considerations
Verify direct replacements such as FQPF7N65C_F105 or other members of the FQPF7N65C series. Check for updated equivalents from onsemi that maintain the 650V/7A/TO-220-3 specification profile.
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