Single FETs, MOSFETs FQPF9N50CT product image

FQPF9N50CT

  • Description:MOSFET N-CH 500V 9A TO220F
  • Series:QFET®
  • Mfr:onsemi
  • Package:Tube

SKU:a86759a1989d Category: Brand:

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FQPF9N50CT is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 500V 9A TO220F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQPF9N50CT

  • Description:MOSFET N-CH 500V 9A TO220F
  • Series:QFET®
  • Mfr:onsemi
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:800mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1030 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):44W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F-3
  • Package / Case:TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for FQPF9N50CT

FQPF9N50CT

Single FETs, MOSFETs Overview

The FQPF9N50CT is a 500V N-Channel enhancement mode power MOSFET manufactured by onsemi, utilizing planar stripe DMOS technology. It features a maximum continuous drain current of 9A at 25°C and a typical on-state resistance of 0.8Ω at VGS = 10V. The device operates within a junction temperature range of -55°C to +150°C and is housed in a TO-220F package.

Single FETs, MOSFETs Feature Summary

  • Utilizes proprietary planar stripe DMOS technology for minimized on-state resistance and superior switching performance.
  • Capable of withstanding high energy pulses in avalanche and commutation modes.
  • Features low gate charge and fast switching characteristics.

Single FETs, MOSFETs Applications

  • High efficiency switched mode power supplies
  • Active power factor correction circuits
  • Electronic lamp ballasts based on half bridge topology

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'CT' against official documentation, as the primary datasheet references the 'FQPF9N50C' designation without this suffix. Confirm RoHS compliance status through official material composition declarations or certificates of conformity provided by the manufacturer.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust high-voltage handling and efficient thermal management. Ensure adequate heat sinking is implemented due to the specified thermal resistance values. Verify that the required gate drive voltage aligns with the threshold and on-resistance specifications.

Single FETs, MOSFETs Part Context

This part belongs to the QFET series from onsemi (formerly Fairchild Semiconductor). It is designed for general-purpose power switching applications where high reliability and efficient energy conversion are critical requirements.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the FQP9N50C variant. Verify pinout compatibility and thermal resistance differences when replacing the standard TO-220 version with the insulated TO-220F package.

Single FETs, MOSFETs FAQ

What is the peak diode recovery dv/dt capability?

The device has a peak diode recovery dv/dt capability of 4.5 V/ns.

Is the device avalanche tested?

Yes, the datasheet specifies that the devices are 100% avalanche tested.

FQPF9N50CTFQPF9N50CT

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