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FQS4901TF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 400V 0.45A 8SOIC. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FQS4901TF
- Description：MOSFET 2N-CH 400V 0.45A 8SOIC
- Series：QFET®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：400V
- Current - Continuous Drain (Id) @ 25°C：450mA
- Rds On (Max) @ Id, Vgs：4.2Ohm @ 225mA, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：210pF @ 25V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FQS4901TF
FET, MOSFET Arrays Overview
The FQS4901TF is a discontinued N-Channel QFET MOSFET manufactured by onsemi. It features a 400V drain-source breakdown voltage and a continuous drain current of 450mA. The device exhibits a maximum on-resistance of 4.2 Ohms at VGS=10V and ID=0.225A, with a typical gate charge of 7.5nC. It operates within a temperature range of -55°C to +150°C junction temperature and dissipates up to 2W of power. Packaged in an SOIC-8 surface-mount configuration, it utilizes planar stripe and DMOS technology for optimized switching performance.
FET, MOSFET Arrays Feature Summary
- High avalanche energy strength verified through 100% testing
- Low reverse transfer capacitance (Crss) for improved switching efficiency
- Enhanced mode operation utilizing proprietary planar stripe and DMOS technology
FET, MOSFET Arrays Applications
- Switched mode power supplies
- Active power factor correction circuits
- Electronic lamp ballasts
FET, MOSFET Arrays Procurement Notes
This component is officially marked as discontinued and is not recommended for new designs. Buyers must contact an onsemi representative directly for further information regarding availability or obsolescence management. Standard distribution channels do not support active ordering for this specific part number.
FET, MOSFET Arrays Selection Notes
Designers should verify that the 4.2 Ohm on-resistance meets thermal requirements for the intended load current. The 400V rating suits high-voltage applications, but the low 450mA current limit restricts usage to small-signal switching tasks. Ensure the SOIC-8 package footprint aligns with existing PCB layouts before finalizing any legacy system maintenance plans.
FET, MOSFET Arrays Part Context
Originally developed under Fairchild Semiconductor, this device was integrated into the onsemi portfolio following corporate acquisition. The datasheet reflects the transition from Fairchild branding to onsemi trademarks while maintaining the original technical specifications associated with the QFET product line.
FET, MOSFET Arrays Replacement Considerations
No direct public substitute part numbers are confirmed in the provided documentation. Due to the discontinued status, engineers must evaluate alternative high-voltage N-Channel MOSFETs with comparable RDS(on) and voltage ratings.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
