FQU1N60TU

$0.22

Description：MOSFET N-CH 600V 1A IPAK
Series：QFET®
Mfr：onsemi
Package：Tube

SKU:15b9a869ff91 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FQU1N60TU is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 600V 1A IPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQU1N60TU

Description：MOSFET N-CH 600V 1A IPAK
Series：QFET®
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：11.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：150 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 30W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：IPAK
Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for FQU1N60TU

FQU1N60TU

Single FETs, MOSFETs Overview

The FQU1N60TU is a 600V N-Channel enhancement mode power MOSFET manufactured by onsemi, utilizing proprietary planar stripe DMOS technology. It features a continuous drain current of 1.0A at 25°C and a static drain-source on-resistance of 11.5Ω at VGS = 10V. The device offers low gate charge (typical 5.0nC) and low reverse transfer capacitance (typical 3.0pF), enabling fast switching performance. It is rated for single pulsed avalanche energy of 50mJ and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Utilizes advanced planar stripe DMOS technology to minimize on-state resistance and enhance switching speed.
Engineered to withstand high energy pulses in both avalanche and commutation modes.
Features improved dv/dt capability and low gate charge for efficient operation.

Single FETs, MOSFETs Applications

High efficiency switch mode power supplies
General purpose power switching applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm datasheet revision status as specifications may be subject to change without notice. Ensure the specific package type matches design requirements before integration. Review absolute maximum ratings carefully to prevent device failure during implementation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust high-voltage handling with moderate current capabilities. The low gate charge supports efficient drive circuits, while the avalanche rating provides resilience against inductive load transients. Evaluate thermal management needs based on the specified power dissipation limits and thermal resistance characteristics.

Single FETs, MOSFETs Part Context

This part belongs to the QFET series from onsemi, designed for general-purpose power switching. It represents a legacy product line originally developed by Fairchild Semiconductor, now integrated into the onsemi portfolio. The technology focuses on balancing conduction losses with switching performance for cost-effective power solutions.

Single FETs, MOSFETs Replacement Considerations

The FQD1N60 is the surface-mount equivalent offering identical electrical characteristics in a DPAK package. Verify pinout compatibility and thermal performance differences when substituting between through-hole and surface-mount variants.