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FS01MR08A8MA2LBCHPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 6N-CH 750V 620A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FS01MR08A8MA2LBCHPSA1
- Description：MOSFET 6N-CH 750V 620A
- Series：HybridPACK™
- Mfr：Infineon Technologies
- Package：Box
- Technology：Silicon Carbide (SiC)
- Configuration：6 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：750V
- Current - Continuous Drain (Id) @ 25°C：620A (Tj)
- Rds On (Max) @ Id, Vgs：1.69mOhm @ 620A, 18V
- Vgs(th) (Max) @ Id：4.55V @ 200mA
- Gate Charge (Qg) (Max) @ Vgs：1480nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds：43000pF @ 470V
- Power - Max：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FS01MR08A8MA2LBCHPSA1
FET, MOSFET Arrays Overview
The FS01MR08A8MA2LBCHPSA1 is a HybridPACK Drive G2 module utilizing silicon carbide MOSFET technology. It features a 750 V drain-source voltage and a nominal DC drain current of 620 A at 175 °C junction temperature. The device incorporates a direct-cooled PinFin base plate for thermal management and utilizes PressFIT contact technology for assembly. It supports continuous operation up to 175 °C with short-time extended capability to 200 °C.
FET, MOSFET Arrays Feature Summary
- Utilizes silicon carbide semiconductor material for low on-state resistance and switching losses
- Features a direct-cooled PinFin base plate with high-performance Si3N4 ceramic insulation
- Includes an integrated temperature sensing diode for thermal monitoring
- Designed with low stray inductance and high creepage distances for robust performance
FET, MOSFET Arrays Applications
- (Hybrid) electrical vehicles (H)EV traction inverters
- Motor drives
- Commercial, construction and agricultural vehicles (CAV)
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration details. Ensure compliance with AQG 324 automotive qualification standards required for target applications. Confirm mechanical mounting torque specifications and cooling circuit pressure limits during integration planning.
FET, MOSFET Arrays Selection Notes
Select this component for high-power density applications requiring efficient thermal dissipation via direct cooling. Evaluate the 750 V rating against system bus voltages and ensure gate drive compatibility with the specified threshold and operating voltages. Consider the 175 °C standard and 200 °C extended junction temperature capabilities for thermal design margins.
FET, MOSFET Arrays Part Context
This module belongs to the HybridPACK Drive G2 family, designed for electric vehicle traction inverters. It represents a scalable power solution within the 750 V class, offering benchmark efficiency through CoolSiC G2 technology. The package maintains industry-standard footprints to facilitate design-in across various power levels.
FET, MOSFET Arrays Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Cross-reference pinouts, thermal characteristics, and electrical ratings before considering any substitute part numbers.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
