FET, MOSFET Arrays FS01MR12A8MA2BHPSA1 product image

FS01MR12A8MA2BHPSA1

$1,684.36
  • Description:FS01MR12A8MA2BHPSA1
  • Series:HybridPACK™

SKU:13271a97098e Category: Brand:

  
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FS01MR12A8MA2BHPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is FS01MR12A8MA2BHPSA1. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FS01MR12A8MA2BHPSA1

  • Description:FS01MR12A8MA2BHPSA1
  • Series:HybridPACK™
  • Mfr:Infineon Technologies
  • Package:Tray
  • Technology:Silicon Carbide (SiC)
  • Configuration:6 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:500A (Tj)
  • Rds On (Max) @ Id, Vgs:1.87mOhm @ 18V, 500A
  • Vgs(th) (Max) @ Id:4.55V @ 240mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:1900pF @ 750V
  • Power - Max:-
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FS01MR12A8MA2BHPSA1

FS01MR12A8MA2BHPSA1

FET, MOSFET Arrays Overview

The FS01MR12A8MA2BHPSA1 is a six-pack Silicon Carbide MOSFET module from the HybridPACK Drive G2 family. It features a 1.2 kV drain-source breakdown voltage and a continuous drain current of 500 A. The on-resistance is 1.87 mOhms, with gate-source voltage limits of -5 V to +19 V. Operating temperature ranges from -40 °C to +175 °C. Key switching parameters include a fall time of 48 ns, rise time of 213 ns, turn-on delay of 175 ns, and turn-off delay of 214 ns.

FET, MOSFET Arrays Feature Summary

  • Utilizes CoolSiC Generation 2 technology for enhanced power density and efficiency in high-voltage applications.
  • Incorporates PinFin base plate design and short tabs to minimize parasitic inductance and improve thermal performance.
  • Configured as a six-pack bridge topology suitable for three-phase inverter circuits.

FET, MOSFET Arrays Applications

  • Traction inverters for electric vehicles
  • On-board chargers
  • DC-DC converters

FET, MOSFET Arrays Procurement Notes

Verify the complete ordering code including the suffix SA1 against official Infineon documentation to ensure correct revision and automotive qualification status. Confirm that the press-fit mounting style matches the target PCB or busbar design specifications before procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a 1200V SiC solution is required for traction or charging systems. The HybridPACK Drive G2 package offers a compact footprint compared to previous generations. Ensure the drive circuit supports the specified 19 V maximum gate voltage and that thermal management meets the junction temperature requirements.

FET, MOSFET Arrays Part Context

This part belongs to the Infineon CoolSiC Generation 2 portfolio, specifically designed for automotive and industrial power conversion. It replaces earlier generation modules by offering lower losses within the same HybridPACK Drive form factor, enabling higher power density designs in electric mobility applications.

FET, MOSFET Arrays Replacement Considerations

Direct pin-to-pin replacements within the same package and electrical class should be verified via the Infineon product selection guide. Cross-generational substitutions require careful evaluation of gate charge and thermal resistance differences.

FS01MR12A8MA2BHPSA1FS01MR12A8MA2BHPSA1
$1,684.36
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