FS02MR12A8MA2BBPSA1

FET, MOSFET Arrays Overview

The FS02MR12A8MA2BBPSA1 is a HybridPACK Drive G2 CoolSiC G2 six-pack power module rated at 1200 V and 390 A. It utilizes silicon carbide technology with a direct-cooled PinFin baseplate for high thermal performance. Key electrical parameters include a drain-source on-resistance of 1.9 mΩ at 25°C, gate threshold voltage of 3.98 V, and total gate charge of 1.19 µC. The junction-to-fluid thermal resistance is 0.121 K/W. Operating temperature ranges from -40°C to 175°C continuously, with short-time extension to 200°C.

FET, MOSFET Arrays Feature Summary

• Utilizes CoolSiC G2 MOSFET technology for low switching losses and high efficiency.
• Features a direct-cooled PinFin baseplate design for enhanced thermal management.
• Includes an integrated temperature sensing diode for precise thermal monitoring.
• Employs PressFIT contact technology for reliable PCB assembly.

FET, MOSFET Arrays Applications

• (Hybrid) electric vehicles (H)EV traction inverters
• Commercial, construction, and agricultural vehicle (CAV) motor drives
• Automotive inverter power classes

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix 'BPSA1' against official Infineon documentation to confirm exact packaging or variant specifications. Ensure compliance with AQG 324 automotive qualification standards during integration. Confirm that the selected cooler design matches the required flow direction and pressure drop limits specified in the application notes.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high power density and low stray inductance. The 1200 V rating supports modern EV architectures. Evaluate thermal requirements against the 0.121 K/W junction-to-fluid resistance. Ensure gate drive voltages align with the recommended 15-18 V range. Consider the short-time extended operation capability up to 200°C for peak load scenarios.

FET, MOSFET Arrays Part Context

This component belongs to the Infineon HybridPACK Drive G2 family, designed for traction inverters. It combines silicon and silicon carbide technologies within a standardized footprint to facilitate scalable designs. The series targets high-efficiency power conversion in electric mobility sectors, offering benchmark performance and industry-standard mechanical interfaces.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Cross-reference pinouts and thermal characteristics when considering other modules in the HybridPACK Drive G2 lineup. Ensure any substitute maintains compatibility with existing gate driver and cooling system designs.

FET, MOSFET Arrays FAQ

What is the maximum continuous operating junction temperature?

The maximum continuous operating junction temperature is 175°C. Short-time extended operation up to 200°C is supported for limited durations.

Does the module include thermal monitoring capabilities?

Yes, the module features an integrated temperature sensing diode for accurate thermal monitoring and protection.

What insulation voltage does the module support?

The module provides 4.2 kV DC isolation for 1 second between terminals and the heatsink.