SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FS100R07N3E4B11BOSA1 is a Trench/Fieldstop IGBT4 module with an Emitter Controlled 4 diode, housed in an EconoPACK™3 package. It features PressFIT contact technology and an integrated NTC temperature sensor. The collector-emitter voltage (VCES) is rated at 650 V, with a continuous DC collector current (IC nom) of 100 A at TC = 70°C and a repetitive peak collector current (ICRM) of 200 A. The typical collector-emitter saturation voltage (VCE sat) is 1.55 V at Tvj = 25°C for IC = 100 A. The total power dissipation (Ptot) is 335 W at TC = 25°C. The operating junction temperature range spans from -40°C to +150°C.
Verify the exact ordering suffix against official Infineon documentation to confirm mechanical and electrical specifications. Confirm that the component utilizes PressFIT termination rather than traditional soldering methods. Ensure compatibility with the required mounting torque and application notes for proper installation and thermal management.
Select this module for applications requiring high blocking voltage and robust short-circuit performance. Consider the 650 V rating and 100 A continuous current capacity for standard industrial power levels. Evaluate the thermal resistance characteristics and the necessity of the integrated NTC sensor for system design requirements.
This component belongs to the EconoPACK™3 series utilizing IGBT4 technology. It represents an evolution in trench field-stop designs aimed at improving switching losses and short-circuit ruggedness compared to previous generations within the same voltage class.
FS100R07N3E4_B11