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The FS100R12KE3BOSA1 is a silicon IGBT module from Infineon Technologies, utilizing Trenchstop IGBT3-E3 technology. It features a six-pack configuration with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 100 A at 25°C. The device has a typical saturation voltage of 1.7 V and a power dissipation rating of 480 W. Packaged in an EconoPACK™ 3 housing, it operates within a junction temperature range of -40°C to +125°C.
Verify the complete part number including the BOSA1 suffix against official Infineon documentation to ensure correct component revision. Confirm RoHS compliance status and check for any specific handling requirements related to moisture sensitivity level 1 before procurement.
Select this module for applications requiring 1200 V blocking capability and 100 A continuous current. Ensure the cooling solution supports the 480 W power dissipation rating. Verify that the gate drive voltage aligns with the standard input specifications for Trenchstop IGBT3 devices.
This component belongs to the FS100R12 series of industrial IGBT modules. It shares the same voltage and current ratings as other variants in the family but differs in packaging or internal configuration. The EconoPACK™ 3 form factor is widely used in medium-power industrial converters.
Direct substitutes include FS100R12KE3 and FS100R12KT4G. Verify pinout compatibility and thermal characteristics when replacing with these alternatives.