SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FS100R12KT4B11BOSA1 is a six-pack IGBT module utilizing Trench/Fieldstop IGBT4 technology and Emitter Controlled 4 Diodes. It features a collector-emitter voltage of 1200 V and a continuous DC collector current of 100 A at 95°C case temperature. The module operates within a junction temperature range of -40°C to 150°C, with a maximum repetitive peak collector current of 200 A. Total power dissipation reaches 515 W at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.75 V and a forward diode voltage of 1.70 V at 25°C. The unit weighs 180 g and utilizes an EconoPACK™2 housing.
Verify the specific BOSA1 suffix against official Infineon documentation to confirm reel packaging or tape-and-reel configuration details. Ensure compatibility with existing thermal interface materials and gate driver circuits before finalizing orders. Confirm RoHS compliance status through the manufacturer's certificate of conformity.
Select this module for applications requiring robust short-circuit withstand capability up to 400 A for 10 µs. Evaluate thermal resistance values carefully to ensure adequate heatsinking for the 515 W dissipation rating. Consider the 19 nH stray inductance when designing PCB layouts to minimize voltage overshoot during switching transitions.
This component belongs to the EconoPACK™2 series from Infineon Technologies. It represents the fourth generation of TrenchStop IGBT technology. The module integrates six independent switches into a single compact package. It serves as a core power conversion element in three-phase inverter topologies.
Direct substitutes include the FS100R12KT4G and FP100R12KT4. Verify pinout compatibility and thermal resistance specifications before substitution. Check datasheet revisions for any changes in switching characteristics or maximum ratings.