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FS10ASJ-3-T13#C02 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is MOSFET N-CH. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FS10ASJ-3-T13#C02
- Description：MOSFET N-CH
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FS10ASJ-3-T13#C02
FET, MOSFET Arrays Overview
The FS10ASJ-3-T13#C02 is a MOSFET array manufactured by Renesas Electronics Corporation. It features a drain-source voltage (VDSS) of 150 V and a continuous drain current (ID) of 10 A. The maximum on-resistance (rDS(ON)) is 160 mΩ, measured at a drive voltage of 4 V. The device integrates a fast recovery diode with a typical reverse recovery time of 90 ns.
FET, MOSFET Arrays Feature Summary
- Dual MOSFET configuration within a single package
- Integrated fast recovery body diode for efficient switching
- Low on-resistance for reduced conduction losses
FET, MOSFET Arrays Applications
- Motor control circuits
- Power supply applications
- Industrial automation systems
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix #C02 against official Renesas documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard surface-mount assembly processes. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before procurement.
FET, MOSFET Arrays Selection Notes
Select this component when a 150 V rating and 10 A current capacity are required in a compact form factor. The integrated fast recovery diode simplifies circuit design by eliminating the need for external freewheeling diodes in inductive load applications.
FET, MOSFET Arrays Part Context
This part belongs to the FS10ASJ series of dual N-channel MOSFET arrays. It is designed for general-purpose power switching applications requiring high efficiency and reliable performance in industrial and consumer electronics environments.
FET, MOSFET Arrays Replacement Considerations
Consult official cross-reference lists for direct substitutes. Verify pinout compatibility and electrical parameters such as VDSS, ID, and rDS(ON) match before replacing.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
