SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FS1150R08A8P3LMC is a HybridPACK Drive G2 six-pack IGBT module rated at 750 V and 1150 A. It features a collector-emitter saturation voltage of 1.08 V to 1.21 V at 600 A, with continuous DC collector current capability of 600 A and repetitive peak current of 2300 A. The module operates within a junction temperature range of -40 °C to 175 °C, extending to 185 °C for short periods. Key electrical parameters include a gate threshold voltage of 4.9 V to 6.65 V, turn-on energy loss of 4.5 mJ, and turn-off energy loss of 31.1 mJ at 600 A. Thermal resistance from junction to cooling fluid is 0.100 K/W to 0.110 K/W.
Verify the specific ordering suffix LMCHPSA1 against official Infineon documentation to confirm mechanical and material specifications. Ensure compatibility with existing HybridPACK Drive G2 evaluation tools and gate driver interfaces. Confirm that the selected variant meets the required AQG 324 automotive qualification standards for the intended application environment.
Select this module for applications requiring high current density and efficient thermal management in electric vehicle traction inverters. Consider the 750 V rating and 1150 A implementation for system voltage and current requirements. Evaluate the thermal resistance values against the expected cooling fluid flow rates and temperatures to ensure junction temperatures remain within safe operating limits during continuous and extended operation.
This component belongs to the HybridPACK Drive G2 family, designed for compact and scalable power solutions in hybrid and electric vehicles. It utilizes silicon IGBT technology optimized for high efficiency and performance. The module maintains industry-standard footprints to facilitate easy design-in and replacement in existing platforms while offering improved thermal and electrical characteristics.
FS1150R08A8P3CHPSA1
The continuous operating junction temperature is up to 175 °C, with short-time extended operation allowed up to 185 °C.
Yes, the module features an integrated on-chip temperature sensor with a forward voltage of 2.280 V at 25 °C and a temperature coefficient of -5.50 mV/K.
The module supports a 4.2 kV DC isolation test voltage for 1 second, providing basic insulation according to IEC 61140 class 1.