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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FS13MR12W2M1H_C55 is a CoolSiC™ Trench MOSFET six-pack module in the EasyPACK™ package. It features a 1200 V drain-source voltage and a continuous DC drain current of 62.5 A at 175 °C junction temperature. The device utilizes PressFIT contact technology and an AlN substrate for low thermal resistance. Key electrical parameters include a maximum on-resistance of 21.7 mΩ at 150 °C, a typical gate charge of 0.2 µC, and a stray inductance of 13 nH. An integrated NTC thermistor with a rated resistance of 5 kΩ at 25 °C provides temperature monitoring.
Verify the specific ordering suffix C55 to confirm the inclusion of PressFIT contacts and the integrated NTC sensor. Ensure compatibility with recommended Infineon gate drivers as specified in the datasheet. Confirm that the industrial qualification meets IEC 60747, 60749, and 60068 standards for the intended application environment.
Select this module for designs requiring high switching frequencies and low inductive layouts. Consider the 1200 V rating and 62.5 A continuous current capability against thermal constraints. Evaluate the 13 nH stray inductance for high-speed switching performance. Verify that the operating junction temperature range of -40 °C to 150 °C aligns with system requirements.
This component belongs to the Infineon CoolSiC™ M1H series within the EasyPACK™ family. It represents a silicon carbide power module designed for industrial efficiency. The six-pack topology allows for three-phase bridge configurations or other multi-switch arrangements in power electronics systems.
Public confirmed substitute part numbers are not available in the provided documentation.