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The FS150R07N3E4BOSA1 is a silicon IGBT module from Infineon Technologies, belonging to the Trench/Fieldstop IGBT4 - E4 series. It features a three-phase inverter configuration within an EconoPACK™ 3 package. The device supports a maximum collector-emitter voltage of 650 V and delivers a continuous collector current of 150 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.55 V, a gate-emitter leakage current of 400 nA, and a power dissipation rating of 430 W. It operates reliably between -40°C and +150°C.
Verify the specific ordering suffix against official datasheets to confirm pinout compatibility and internal component variations. Ensure that any alternative part numbers are cross-referenced with manufacturer documentation to validate functional equivalence before integration into designs.
Select this module for applications requiring high current density and low conduction losses at 650V. Confirm that the system's thermal management can handle the 430W dissipation rating. Verify that the drive circuitry aligns with the standard gate requirements typical of the IGBT4 family.
This component is part of Infineon's EconoPACK™ 3 lineup, designed for compact power conversion. It succeeds earlier generations by offering improved efficiency through field-stop technology. The module serves as a critical switching element in medium-power industrial inverters.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon replacement guides for verified alternatives.