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The FS150R12KE3GBOSA1 is a six-pack IGBT module utilizing Trench/Fieldstop IGBT3 technology and an Emitter Controlled High Efficiency diode. It features a collector-emitter voltage of 1200 V, a continuous DC collector current of 150 A at 80°C case temperature, and a repetitive peak collector current of 300 A. The module dissipates up to 695 W with a total power dissipation rating. Key electrical parameters include a collector-emitter saturation voltage of 1.70 V (typical) and a forward voltage of 1.65 V for the integrated diode. Thermal resistance from junction to case is 0.18 K/W per IGBT and 0.34 K/W per diode.
Verify the specific ordering suffix against official Infineon documentation to confirm exact manufacturing lot details and compliance certifications. Ensure that the component matches the required technical specifications for the intended application before finalizing procurement orders.
Select this module based on its 1200 V blocking capability and 150 A continuous current rating. Evaluate the thermal resistance values and the operating temperature range to ensure compatibility with the system's cooling infrastructure and expected load profiles.
This component belongs to the Infineon Trenchstop IGBT3 series, which utilizes advanced trench gate technology to reduce switching losses. The EconoPACK+ packaging provides a standardized form factor widely used in industrial power electronics for reliable integration into various inverter topologies.
Consult official Infineon cross-reference lists for verified substitutes. Do not assume functional equivalence with other manufacturers or different series without validating all electrical and mechanical parameters against the original datasheet.
The module can withstand a short circuit for a duration of up to 10 µs under specified conditions.
Yes, the module integrates an NTC thermistor to allow for accurate monitoring of the internal temperature.
The module supports an isolation test voltage of 2.5 kV RMS at 50 Hz for one minute.