SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FS150R12N3T4B80BPSA1 is a silicon IGBT module manufactured by Infineon Technologies, belonging to the Trenchstop IGBT4 series. It features a 6-pack configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 150 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.75 V and operates within a junction temperature range of -40°C to +150°C. Packaged in Econo 3 format for screw mounting, it includes an integrated NTC thermistor for thermal monitoring.
Verify the specific suffix B80 against official datasheets to confirm pinout or variant details. Confirm RoHS compliance status and check for alternative suffixes like BOSA1 if sourcing constraints exist. Ensure thermal interface materials match the Econo 3 mounting requirements.
Select this component for applications requiring 1.2 kV blocking capability and 150 A current handling. Compare the 1.75 V saturation voltage against system efficiency targets. Verify that the +150°C maximum junction temperature aligns with the intended thermal design and ambient operating conditions.
This part belongs to the FS150R12 family of Infineon IGBT modules. It shares core electrical specifications with variants such as FS150R12KT4 and FS150R12N3T7BPSA1, differing primarily in packaging suffixes and specific manufacturing revisions documented in official release notes.
FS150R12KT4BOSA1 is a confirmed substitute within the same product family. FS150R12N3T7BPSA1 offers similar electrical ratings but may differ in thermal characteristics due to package variations.