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The FS150R12W3T7_B11 is a single-trench IGBT module from Infineon's EasyPACK™ series, utilizing TRENCHSTOP™ IGBT7 technology. It features a 1200 V collector-emitter voltage and a nominal continuous DC collector current of 150 A at 175 °C junction temperature. The device incorporates an integrated NTC thermistor with a rated resistance of 5 kΩ at 25 °C. Electrical characteristics include a typical saturation voltage of 1.55 V and a maximum repetitive peak collector current of 300 A. The module employs PressFIT contact technology for board mounting.
Verify the specific ordering suffix against official documentation to confirm mechanical interface and electrical configuration. Ensure compliance with industrial qualification standards such as IEC 60747 and IEC 60068 before integration. Confirm that the application environment supports the specified operating temperature range up to 175 °C.
Select this component for applications requiring high thermal cycling endurance and low stray inductance. The 15 nH internal stray inductance supports high-speed switching operations. Verify that the gate drive circuitry accommodates the ±20 V peak gate-emitter voltage rating and the specific internal gate resistor values.
This module belongs to the EasyPACK™ family designed for compact power electronics. It represents the seventh generation of TRENCHSTOP™ technology, superseding previous generations like TRENCHSTOP™5. The product is specifically engineered for industrial applications demanding robust performance under overload conditions.
Consult official replacement lists for direct substitutes. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions. Verify compatibility with existing PCB layouts due to the PressFIT termination style.
The maximum junction temperature under switching conditions is 175 °C. Operation above 150 °C is permitted for overload conditions as per application note AN 2018-14.
The module uses PressFIT contact technology for connection to the printed circuit board, eliminating the need for soldering the main power terminals.
The IGBT can withstand a short-circuit condition for up to 8 µs at a junction temperature of 150 °C and up to 7 µs at 175 °C.