FS150R17PE4BOSA1

Overview

The FS150R17PE4BOSA1 is an EconoPACK™4 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technology. It provides a collector-emitter voltage (VCES) of 1700 V, with a continuous DC collector current (IC nom) of 150 A at TC = 100°C and a repetitive peak collector current (ICRM) of 300 A. The module includes an integrated NTC thermistor with a rated resistance of 5.0 kΩ at 25°C. Key electrical parameters include a typical VCEsat of 2.30 V at Tvj = 125°C and a gate threshold voltage (VGEth) ranging from 5.20 V to 6.40 V. Thermal resistance from junction to case is 0.180 K/W for the IGBT and 0.340 K/W for the diode.

Feature Summary

• Utilizes Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode architecture for optimized switching performance.
• Features an isolated copper base plate and standard housing design for high power density.
• Incorporates PressFIT terminals and an integrated NTC thermistor for simplified mounting and thermal monitoring.
• Offers extended operating junction temperature capability up to 150°C.

Applications

• High power converters
• Motor drives
• UPS systems
• Wind turbines

Procurement Notes

Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm package type and terminal configuration. Ensure compatibility with existing PCB layouts and cooling systems. Confirm that the PressFIT termination method aligns with assembly equipment capabilities. Validate thermal interface material specifications for the required thermal resistance values.

Selection Notes

Select this component for applications requiring 1700 V blocking capability and 150 A continuous current handling. Consider the positive temperature coefficient of VCEsat for parallel operation stability. Evaluate the stray inductance of 20 nH for circuit layout optimization. Ensure the drive circuit supports the specified gate voltage range of +/-20 V and internal gate resistor of 5.0 Ω.

Part Context

This part belongs to the Infineon EconoPACK™4 family, designed for compact high-power modules. It integrates advanced IGBT4 and EC4 diode technologies within a standardized housing. The series emphasizes high power density and reliable thermal management through its isolated base plate construction.

Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement matches the 1700 V rating, 150 A current capacity, and EconoPACK™4 mechanical footprint. Verify equivalent thermal resistance and switching characteristics before implementation.

FAQ

What is the maximum short-circuit withstand time for this module?

The module can withstand a short-circuit condition for a maximum duration of 10 µs when the junction temperature is 150°C and the collector current is limited to 700 A.

What is the isolation test voltage between terminals and heatsink?

The isolation test voltage is 3.4 kV RMS at 50 Hz for a duration of 1 minute.

How does the VCEsat vary with temperature?

The VCEsat exhibits a positive temperature coefficient, increasing from a typical 1.95 V at 25°C to 2.45 V at 150°C under rated conditions.