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The FS200R07N3E4RB11BOSA1 is a Trench/Fieldstop IGBT4 module in the EconoPACK™3 housing, configured as a three-phase inverter with emitter-controlled diodes. It features PressFIT and solder contact technologies alongside an integrated NTC temperature sensor. Key electrical parameters include a collector-emitter voltage (VCES) of 650 V, a nominal continuous DC collector current (ICDC) of 200 A at TC=60°C, and a repetitive peak collector current (ICRM) of 400 A. The saturation voltage (VCEsat) ranges from 1.55 V to 1.95 V at IC=200 A and VGE=15 V. Operating junction temperatures reach up to 150°C under switching conditions.
Verify the exact ordering suffix against official Infineon documentation to confirm mechanical interface variations. Confirm that the component meets specific industrial qualification requirements defined by IEC 60747, 60749, and 60068 before finalizing procurement specifications.
Select this module for applications requiring a 650 V rating and 200 A continuous current capacity. Ensure the gate drive circuit accommodates the specified internal gate resistance and input capacitance values. Verify that the system design supports the maximum operating junction temperature of 150°C during switching operations.
This component belongs to the FS200R07 series within Infineon's EconoPACK™3 product line. It utilizes Trench/Fieldstop IGBT4 technology and is designed for robust industrial power conversion environments. The module integrates both IGBTs and emitter-controlled diodes into a single three-phase inverter configuration.
Consult official Infineon cross-reference lists for verified substitutes. Ensure any replacement maintains identical voltage ratings, current capacities, and package dimensions to guarantee mechanical and electrical compatibility.