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The FS200R10W3S7_B11 is an EasyPACK™ IGBT module featuring TRENCHSTOP™ IGBT7 and emitter controlled 7 diode technology. It provides a collector-emitter voltage (VCES) of 950 V, a nominal implemented current (ICN) of 200 A, and a repetitive peak current (ICRM) of 300 A. The continuous DC collector current reaches 130 A at a heatsink temperature of 65 °C. Operating junction temperatures extend up to 150 °C. Electrical characteristics include a typical saturation voltage of 1.69 V at 25 °C and a thermal resistance from junction to heat sink of 0.387 K/W for the IGBT.
Verify component authenticity by cross-referencing the Data Matrix barcode on the module label against official Infineon records. Confirm that the specific ordering suffix matches the required technical specifications. Ensure compliance with industrial qualification standards such as IEC 60747 and IEC 60068 before integration into final designs.
Select this module for applications requiring 950 V blocking capability and high current handling up to 200 A. Consider the 150 °C operating junction temperature limit when designing thermal management solutions. Verify that the PCB layout supports PressFIT mounting requirements and that gate drive circuits accommodate the specified internal gate resistance values.
This component belongs to the EasyPACK™ family of insulated gate bipolar transistor modules manufactured by Infineon Technologies. It represents the seventh generation of TRENCHSTOP™ technology, designed specifically for industrial applications requiring high reliability and efficient power conversion in medium-power scenarios.
Consult official Infineon documentation for qualified alternative part numbers within the EasyPACK™ series or other compatible module families. Ensure any substitute maintains identical voltage ratings, current capabilities, and mechanical footprint specifications.
The maximum operating junction temperature (Tvj op) is specified as 150 °C.
Mechanical robustness is achieved through PressFIT contact technology, which eliminates traditional wire bonds.
The rated resistance (R25) of the integrated NTC thermistor is 5 kΩ at 25 °C.